Dipole Correction in Slab Supercell

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tommy91779

Dipole Correction in Slab Supercell

#1 Post by tommy91779 » Mon Dec 14, 2009 7:04 pm

Hello all,


I am attempting to determine the formation energy for a variety of defects of varying charge states on the surface of a semiconductor. I initially began my calculations by selecting an 8-layer slab and fixing the bottom 3 layers to the bulk lattice constants. I soon realized that I had a significant dipole that arose between the relaxed and unrelaxed side of my slab. I have begun to use the dipole correction flags in VASP however I read that for charged calculations, these tags can only be used to cubic super cells. My supercell is orthorhombic. So two questions:

1. Is there a work around to use the dipole corrections in VASP to treat orthorhombic cells (I suspect not.......)

2. If I decide to do a full relaxation of all the layers, will there be a dipole arising if I put a defect on only one surface or do I have to put one on the ther surface??


Thanks in advance
Last edited by tommy91779 on Mon Dec 14, 2009 7:04 pm, edited 1 time in total.

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Re: Dipole Correction in Slab Supercell

#2 Post by support_vasp » Wed Sep 11, 2024 2:17 pm

Hi,

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